advanced power n-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss 40v simple drive requirement r ds(on) 7m ? fast switching characteristic i d 80a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 62 /w data & specifications subject to change without notice 201008021 1 maximum thermal resistance, junction-ambient total power dissipation thermal data parameter total power dissipation storage temperature range operating junction temperature range continuous drain current, v gs @ 10v 55 pulsed drain current 1 320 -55 to 150 -55 to 150 89 2 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 80 parameter rating drain-source voltage 40 AP9468GP-HF halogen-free product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widly preferred for commercial-industrial power applications and suited for low voltage applications such as dc/dc converters. g d s g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 7 m ? v gs =4.5v, i d =30a - - 9 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.5 v g fs forward transconductance v ds =10v, i d =30a - 75 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 1 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =30a - 36 58 nc q gs gate-source charge v ds =30v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 20 - nc t d(on) turn-on delay time 2 v ds =20v - 8 - ns t r rise time i d =30a - 62 - ns t d(off) turn-off delay time r g =1.0 ? -36- ns t f fall time v gs =10v - 16 - ns c iss input capacitance v gs =0v - 2235 3580 pf c oss output capacitance v ds =25v - 365 - pf c rss reverse transfer capacitance f=1.0mhz - 325 - pf r g gate resistance f=1.0mhz - 1.8 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0 v , - 38 - ns q rr reverse recovery charge di/dt=100a/s - 30 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9468GP-HF
AP9468GP-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 5.0v 4.5 v v g =3.0v 0 40 80 120 160 200 240 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 3.0 v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4.0 5.0 6.0 7.0 8.0 020406080 i d , drain current (a) r ds(on) (m ? ) v gs =10v 4 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c v gs =4.5v
AP9468GP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =20v v ds =25v v ds =30v 0 1000 2000 3000 4000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 40 80 120 160 200 240 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on)
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